Example：10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors. Nature Communications (IF17.694), Pub Date : 2018-12-05, DOI: 10.1038/s41467-018-07555-6 Gang Wang,Miao Zhang,Da Chen,Qinglei Guo,Xuefei Feng,Tianchao Niu,Xiaosong Liu,Ang Li,Jiawei Lai,Dong Sun,Zhimin Liao,Yongqiang Wang,Paul K. Chu,Guqiao Ding,Xiaoming Xie,Zengfeng Di,Xi Wang
Lateral graphene p-n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p-n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p-n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p-n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p-n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.