Example：10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Progress and prospects of GaN-based VCSEL from near UV to green emission Progress in Quantum Electronics (IF12.25), Pub Date : 2018-01-01, DOI: 10.1016/j.pquantelec.2018.02.001 Hsin-chieh Yu, Zhi-wei Zheng, Yang Mei, Rong-bin Xu, Jian-ping Liu, Hui Yang, Bao-ping Zhang, Tien-chang Lu, Hao-chung Kuo
Abstract GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.