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Carrier Injection and Manipulation of Charge-Density Wave in Kagome SuperconductorCsV3Sb5
Physical Review X  (IF15.762),  Pub Date : 2022-01-03, DOI: 10.1103/physrevx.12.011001
Kosuke Nakayama, Yongkai Li, Takemi Kato, Min Liu, Zhiwei Wang, Takashi Takahashi, Yugui Yao, Takafumi Sato

Kagome metals $A{\mathrm{V}}_{3}{\mathrm{Sb}}_{5}$ ($A=\mathrm{K}$, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to ${\mathrm{CsV}}_{3}{\mathrm{Sb}}_{5}$ by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb $5{p}_{z}$ and V $3{d}_{xz/yz}$ bands as opposed to the relatively insensitive nature of the V $3{d}_{xy/{x}^{2}-{y}^{2}}$ bands. By monitoring the temperature evolution of the CDW gap around the $\overline{M}$ point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V $3{d}_{xy/{x}^{2}-{y}^{2}}$ character almost pinned at the Fermi level. The present result suggests a crucial role of multiorbital effect to the occurrence of CDW and provides an important step toward manipulating the CDW and superconductivity in $A{\mathrm{V}}_{3}{\mathrm{Sb}}_{5}$.