Example：10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Investigation of stimulated Raman scattering effect on designing of NG-EPON systems Optical Engineering (IF1.084), Pub Date : 2021-12-01, DOI: 10.1117/1.oe.60.12.126101 Yan Xu, Asad Saleem
Due to the higher bandwidth requirements of the user, the multi-wavelength based next-generation Ethernet passive optical network (NG-EPON) has emerged to provide potential solutions for the wide-range coverage and to accommodate multiple consumers per fiber. In this paper, the stimulated Raman scattering (SRS) effect in NG-EPON systems is studied, where upstream and downstream wavelengths are both located in the O-band. The influence of SRS effect on the 4 × 25G and 8 × 25G NG-EPON wavelengths is investigated, and it involves two aspects, including the SRS-induced crosstalk and power depletion. For the former, owing to the short interaction time between upstream and downstream wavelengths, the SRS-induced crosstalk on the bit error rate (BER) performance of the 4-channel and 8-channel NG-EPON systems can be neglected. For the latter case, 1.3 dB power depletion can be subjected to the 4-channel NG-EPON system, when the launched power of the downstream wavelength is 12 dBm and the fiber length is 40 km. Furthermore, with the increase of number of channels, the SRS causes more severe impact on the 8-channel NG-EPON system, leading towards the 2.9-dB power depletion. The given results could be useful in providing practical contributions for the designing of future NG-EPON systems.