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Paramagnetic spin Hall magnetoresistance
Physical Review B  (IF4.036),  Pub Date : 2021-10-25, DOI: 10.1103/physrevb.104.134428
Koichi Oyanagi, Juan M. Gomez-Perez, Xian-Peng Zhang, Takashi Kikkawa, Yao Chen, Edurne Sagasta, Andrey Chuvilin, Luis E. Hueso, Vitaly N. Golovach, F. Sebastian Bergeret, Fèlix Casanova, Eiji Saitoh

We report the observation of the spin Hall magnetoresistance (SMR) in a paramagnetic insulator. By measuring the transverse resistance in a Pt/Gd3Ga5O12 (GGG) system at low temperatures, paramagnetic SMR is found to appear with an intensity that increases with the magnetic field aligning GGG's spins. The observed effect is well supported by a microscopic SMR theory, which provides the parameters governing the spin transport at the interface. Our findings clarify the mechanism of spin exchange at a Pt/GGG interface, and demonstrate tunable spin-transfer torque through the field-induced magnetization of GGG. In this regard, paramagnetic insulators offer a key property for future spintronic devices.