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1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
IEEE Transactions on Power Electronics  (IF6.153),  Pub Date : 2021-09-01, DOI: 10.1109/tpel.2021.3108780
Feng Zhou, Hehe Gong, Weizong Xu, Xinxin Yu, Yang Xu, Yi Yang, Fang-fang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Jiandong Ye, Hai Lu

The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercialization. In this letter, by implementing beveled-mesa NiO/Ga 2 O 3 p–n heterojunction diodes (HJDs) into a 500-W power factor correction (PFC) system circuit, high conversion efficiency of 98.5% with 100-min stable operating capability has been demonstrated. In particular, rugged reliability is validated after over 1 million times dynamic breakdown with a 1.2-kV peak overvoltage. Meanwhile, superior device performance is achieved, including a static breakdown voltage (BV) of 1.95 kV, a dynamic BV of 2.23 kV, a forward current of 20 A (2 kA/cm 2 current density), and a differential specific on -resistance of 1.9 mΩ·cm 2 . These results indicate that Ga 2 O 3 power HJDs are developing rapidly with their own advantages, presenting the enormous potential in high-efficiency, high-power, and high-reliability applications.