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Interfacial resistive switching of Ruddlesden–Popper phase strontium titanate thin film by charge-modulated Schottky barrier
FlatChem  (IF5.227),  Pub Date : 2021-03-11, DOI: 10.1016/j.flatc.2021.100239
Zhen-Xun Tang, Jun Li, Xin-Gui Tang, Qiu-Xiang Liu, Yan-Ping Jiang

Ruddlesden–Popper (RP) phase Sr2TiO4 thin film is deposited successfully on FTO/glass substrate by spin coating. X-ray diffraction (XRD) pattern shows high-intensity (00 l) (l = 2, 4, and 6) peaks. The device shows bipolar resistive switching (RS) effect. Analysis on current–voltage (I-V) characteristic shows that conduction mechanism is dominated by Schottky emission in both low resistive state (LRS) and high resistive state (HRS). A variation (~0.12 eV) in Schottky barrier height (SBH) is observed between HRS and LRS. Thus, RS at electrode-Sr2TiO4 interface is the main mechanism. In general, variation of SBH is induced by accumulation of interfacial charges. Polarization-voltage (P-V) measurement shows hysteresis loop, which indicates the accumulation of interfacial charges. Formation and migration of charged oxygen vacancies and ions is proposed to be a possible mechanism of interfacial charges accumulation. This study paves the avenue for exploring RS application based on RP phase Sr2TiO4 perovskite oxide.