Example：10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Selective Area Epitaxy By Metalorganic Chemical Vapor Deposition– A Tool For Photonic And Novel Nanostructure Integration Progress in Quantum Electronics (IF12.25), Pub Date : 2020-11-01, DOI: 10.1016/j.pquantelec.2020.100304 P. Daniel Dapkus, Chun Yung Chi, Sang Jun Choi, Hyung Joon Chu, Mitchell Dreiske, Rijuan Li, Yenting Lin, Yoshitake Nakajima, Dawei Ren, Ryan Stevenson, Maoqing Yao, Ting Wei Yeh, Hanmin Zhao
Abstract Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is made. Throughout, the pioneering work led by Professor James J. Coleman is used to illustrate the value of using selective growth for various applications.