Find Paper, Faster
Example:10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection.
Science Advances  (IF14.957),  Pub Date : 2020-09-02, DOI: 10.1126/sciadv.abb6500
Cheng Guo,Yibin Hu,Gang Chen,Dacheng Wei,Libo Zhang,Zhiqingzi Chen,Wanlong Guo,Huang Xu,Chia-Nung Kuo,Chin Shan Lue,Xiangyan Bo,Xiangang Wan,Lin Wang,Antonio Politano,Xiaoshuang Chen,Wei Lu

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz0.5 are achieved at room temperature, validating the suitability of PdTe2-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.