Example：10.1021/acsami.1c06204 or Chem. Rev., 2007, 107, 2411-2502
Broadband InSb/Si heterojunction photodetector with graphene transparent electrode Nanotechnology (IF3.953), Pub Date : 2020-05-14, DOI: 10.1088/1361-6528/ab884c Xiaoxia Li, Tai Sun, Kai Zhou, Xin Hong, Xinyue Tang, Dacheng Wei, Wenlin Feng, Jun Shen, Dapeng Wei
Silicon-based Schottky heterojunction photodetectors are promising due to its compatibility with semiconductor process. However, the applications of these devices are usually limited to wavelength shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrode are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, as-prepared photodetector show broadband photoresponse with high performance which includes a specific detectivity of 1.9×1012 cm Hz1/2/W, responsivity of 132 mA/W, on/off ratio of 1×105, rise time of 2 µs, 3dB cut-off frequency of 172 KHz and response wavelength covering 635 nm, 1.55 µm and 2.7 µm. This report proved that graphene as transparent electrode has a great effect on the performance improvement of the silicon-based compound semiconductor heterojunction photodetectors.